Trans IGBT Chip N-CH 1200V 11A 60000mW 3Pin2+Tab D2PAK Tube
**Single IGBT up to 20A, Infineon**
optimized IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilize FRED diodes optimized to provide the best performance with IGBTs
得捷:
SHORT CIRCUIT RATED ULTRAFAST IG
艾睿:
Trans IGBT Chip N-CH 1.2KV 11A 3-Pin2+Tab D2PAK Tube
Verical:
Trans IGBT Chip N-CH 1.2KV 11A 3-Pin2+Tab D2PAK Tube
DeviceMart:
IGBT UFAST 1200V 11A D2PAK
额定电压DC 1.20 kV
额定电流 11.0 A
极性 N-Channel
耗散功率 60 W
产品系列 IRG4BH20K-S
上升时间 26 ns
击穿电压集电极-发射极 1200 V
热阻 2.1℃/W RθJC
额定功率Max 60 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17