Cache SRAM, 512KX36, 3.1ns, CMOS, PBGA165, 13 X 15MM, 1MM PITCH, PLASTIC, BGA-165
* Internal self-timed write cycle * Individual Byte Write Control and Global Write * Clock controlled, registered address, data and control * Burst sequence control using MODE input * Three chip enable option for simple depth expansion and address pipelining * Common data inputs and data outputs * Auto Power-down during deselect * Double cycle deselect * Snooze MODE for reduced-power standby * JTAG Boundary Scan for PBGA package * Power Supply: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5% * JEDEC 100-Pin TQFP package * Lead-free available
型号/品牌 | 代替类型 | 替代型号对比 |
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IS61LPD51236A-200B3 Integrated Silicon SolutionISSI | 当前型号 | 当前型号 |
IS61LPD51236A-200B3I Integrated Silicon SolutionISSI | 功能相似 | IS61LPD51236A-200B3和IS61LPD51236A-200B3I的区别 |