SRAM Chip Async Single 2.5V/3.3V 16M-bit 1M x 16 25ns 48Pin TFBGA
DESCRIPTION
TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.
FEATURES
• High-speed access times: 25, 35 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CS1 and OE options
• CS1 power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V IS62WV102416ALL
speed = 35ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V IS62/65WV102416BLL
speed = 25ns for VDD 2.4V to 3.6V
• Packages available:
– 48-ball miniBGA 9mm x 11mm
– 48-pin TSOP Type I
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes