Trans MOSFET P-CH 100V 23A 3Pin3+Tab TO-262 Tube
**P-Channel Power MOSFET over 8A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET P-CH 100V 23A 3-Pin3+Tab TO-262 Tube
Allied Electronics:
MOSFET, P-CHANNEL, -100V, -23A, 117 MOHM, 64.7 NC QG, TO-262
Verical:
Trans MOSFET P-CH 100V 23A 3-Pin3+Tab TO-262 Tube
DeviceMart:
MOSFET P-CH 100V 23A TO262-3
漏源极电阻 117 mΩ
极性 P-Channel
耗散功率 110 W
产品系列 IRF9540NL
漏源极电压Vds 100 V
连续漏极电流Ids -23.0 A
上升时间 67.0 ns
输入电容Ciss 1450pF @25VVds
额定功率Max 3.1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-262-3
长度 10.67 mm
高度 9.65 mm
封装 TO-262-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC