-12V,-16A,7mΩ,P沟道功率MOSFET
**HEXFET® P-Channel Power MOSFETs, Infineon**
HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
e络盟:
The IRF7410TRPBF is a -12V single P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques.
艾睿:
Trans MOSFET P-CH Si 20V 16A 8-Pin SOIC T/R
Allied Electronics:
MOSFET, Power; P-Ch; VDSS -12V; RDSON 7 Milliohms; ID -16A; SO-8; PD 2.5W; VGS +/-8V
Verical:
Trans MOSFET P-CH 20V 16A 8-Pin SOIC T/R
力源芯城:
-12V,-16A,7mΩ,P沟道功率MOSFET
DeviceMart:
MOSFET P-CH 12V 16A 8-SOIC
通道数 1
漏源极电阻 7 mΩ
极性 P-Channel
耗散功率 2.5 W
产品系列 IRF7410
阈值电压 900 mV
漏源极电压Vds 12 V
输入电容Ciss 8676pF @10VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17