MOSFET, Power; N-Ch; VDSS 40V; RDSON 1.5Milliohms; ID 75A; D2Pak; PD 330W; VGS +/-20
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH Si 40V 270A 3-Pin2+Tab D2PAK Tube
Verical:
Trans MOSFET N-CH 40V 270A 3-Pin2+Tab D2PAK Tube
DeviceMart:
MOSFET N-CH 40V 75A D2PAK
额定电压DC 40.0 V
额定电流 75.0 A
通道数 1
漏源极电阻 2.3 mΩ
极性 N-Channel
耗散功率 300 W
产品系列 IRF2804S
阈值电压 4 V
输入电容 6450pF @25V
漏源极电压Vds 40 V
漏源击穿电压 40 V
连续漏极电流Ids 270 A
输入电容Ciss 6450pF @25VVds
额定功率Max 300 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 10.67 mm
高度 4.703 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF2804SPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STB200NF04T4 意法半导体 | 功能相似 | IRF2804SPBF和STB200NF04T4的区别 |