INFINEON IPB180N04S4-01 晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0011 ohm, 10 V, 3 V
Summary of Features:
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- N-channel - Enhancement mode
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- AEC qualified
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- MSL1 up to 260°C peak reflow
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- 175°C operating temperature
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- Green product RoHS compliant
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- Ultra low Rdson
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- 100% Avalanche tested
Benefits:
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- world"s lowest RDS at 40V on
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- highest current capability
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- lowest switching and conduction power losses for highest thermal efficiency
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- robust packages with superior quality and reliability
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- Optimized total gate charge enables smaller driver output stages
针脚数 7
漏源极电阻 0.0011 Ω
极性 N-Channel
耗散功率 188 W
阈值电压 3 V
漏源极电压Vds 40 V
连续漏极电流Ids 180A
上升时间 24 ns
输入电容Ciss 10770pF @25VVds
下降时间 41 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 188000 mW
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-7
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, elec, Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPB180N04S4-01 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPB180N04S4-H0 英飞凌 | 类似代替 | IPB180N04S4-01和IPB180N04S4-H0的区别 |
IPB011N04NG 英飞凌 | 功能相似 | IPB180N04S4-01和IPB011N04NG的区别 |