INFINEON IPB60R600CP 功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
The is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching SMPS topologies.
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- Low figure-of-meritFOM RON x Qg
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- Extreme dV/dt rated
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- High peak current capability
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- Qualified according to JEDEC for target applications
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- Ultra low RDS ON
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- Very fast switching
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- Internal Rg very low
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- High current capability
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- Significant reduction of conduction and switching losses
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- High power density and efficiency for superior power conversion systems
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- Best-in-class performance ratio
通道数 1
针脚数 3
漏源极电阻 0.54 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 6.10 A
上升时间 12 ns
输入电容Ciss 550pF @100VVds
额定功率Max 60 W
下降时间 17 ns
工作温度Max 150 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.45 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 Power Management, Consumer Electronics, Industrial, Alternative Energy, Communications & Networking
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPB60R600CP Infineon 英飞凌 | 当前型号 | 当前型号 |
IPB60R520CP 英飞凌 | 类似代替 | IPB60R600CP和IPB60R520CP的区别 |
SPB07N60S5 英飞凌 | 类似代替 | IPB60R600CP和SPB07N60S5的区别 |
SPD07N60C3 英飞凌 | 功能相似 | IPB60R600CP和SPD07N60C3的区别 |