-4.3A,-12V,P沟道功率MOSFET
These P-Channel MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device
for use in battery and load management. A thermally enhanced large pad lead frame has been incorporated into the standard SOT-23 package to produce a HEXFET® Power MOSFET with the industry"s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile <1.1 mm of the Micro3™ allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
**Features:**
* Ultra Low On-Resistance
* P-Channel MOSFET
* SOT-23 Footprint
* Low Profile <1.1 mm
* Available in Tape and Reel
* Fast Switching
* 1.8 V Gate Rated
额定电压DC -12.0 V
额定电流 -4.30 A
漏源极电阻 0.085 Ω
极性 P-Channel
耗散功率 1.3 W
产品系列 IRLML6401
漏源极电压Vds 12 V
连续漏极电流Ids -4.30 A
上升时间 32.0 ns
输入电容Ciss 830pF @10VVds
额定功率Max 1.3 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.04 mm
高度 1.02 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRLML6401TRPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
SI2333CDS-T1-E3 威世 | 功能相似 | IRLML6401TRPBF和SI2333CDS-T1-E3的区别 |