IMD10AMT1G

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IMD10AMT1G概述

双偏置电阻晶体管 Dual Bias Resistor Transistor

NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network.


得捷:
TRANS NPN/PNP PREBIAS SC74R


贸泽:
双极晶体管 - 预偏置 SURF MT BIASED RES XSTR


e络盟:
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 500 mA, 130 ohm, 0.012 电阻比率


艾睿:
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor&s;s npn and PNP IMD10AMT1G digital transistor. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 100@1mA@5 V@NPN|68@100mA@5V@PNP. It has a maximum collector emitter saturation voltage of 0.3@1mA@100mA V. Its maximum power dissipation is 285 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.


安富利:
Trans Digital BJT NPN/PNP 50V 500mA 6-Pin SC-74R T/R


Verical:
Trans Digital BJT NPN/PNP 50V 500mA 285mW 6-Pin SC-74R T/R


IMD10AMT1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN+PNP

耗散功率 285 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 500mA

最小电流放大倍数hFE 68

额定功率Max 285 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 285 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-74-6

外形尺寸

封装 SC-74-6

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IMD10AMT1G
型号: IMD10AMT1G
描述:双偏置电阻晶体管 Dual Bias Resistor Transistor

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