INFINEON IPD640N06LGBTMA1 晶体管, MOSFET, N沟道, 18 A, 60 V, 0.047 ohm, 10 V, 1.6 V
The IPD640N06L G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies SMPS such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
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- Highest system efficiency
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- Less paralleling required
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- Increased power density
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- Very low voltage overshoot
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- Superior thermal resistance
针脚数 3
漏源极电阻 0.047 Ω
极性 N-Channel
耗散功率 47 W
阈值电压 1.6 V
漏源极电压Vds 60 V
连续漏极电流Ids 18A
上升时间 25 ns
输入电容Ciss 470pF @30VVds
额定功率Max 47 W
下降时间 32 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 47W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
制造应用 Or-ing switches, Motor Drive & Control, 电源管理, Synchronous rectification, 电机驱动与控制, Industrial, Power Management, Alternative Energy, 工业, Isolated DC-DC converters, 替代能源
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD640N06LGBTMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IRFR024NPBF 英飞凌 | 类似代替 | IPD640N06LGBTMA1和IRFR024NPBF的区别 |
FDD5612 飞兆/仙童 | 功能相似 | IPD640N06LGBTMA1和FDD5612的区别 |
HUFA76409D3ST 飞兆/仙童 | 功能相似 | IPD640N06LGBTMA1和HUFA76409D3ST的区别 |