N沟道 30V 7.3A
Description
Fifth Generation HEXFET® power MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Generation V Technology
• Ultra Low On-Resistance
• N-Channel MOSFET
• Surface Mount
• Available in Tape & Reel
• Dynamic dv/dt Rating
• Fast Switching
• Lead-Free
额定电压DC 30.0 V
额定电流 7.30 A
漏源极电阻 0.05 mΩ
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7201
阈值电压 1 V
输入电容 550pF @25V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 7.30 A
上升时间 35.0 ns
输入电容Ciss 550pF @25VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17