MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.1Ω; ID 3.2A; Micro6 SOT-23; PD 1.7W; -55de
**N-Channel Power MOSFET up to 7A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
IRLMS1503 - 12V-300V N-CHANNEL P
艾睿:
Trans MOSFET N-CH 30V 3.2A 6-Pin TSOP T/R
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.1Ohm; ID 3.2A; Micro6 SOT-23; PD 1.7W; -55de
Verical:
Trans MOSFET N-CH 30V 3.2A 6-Pin TSOP T/R
DeviceMart:
MOSFET N-CH 30V 3.2A 6-TSOP
额定电压DC 30.0 V
额定电流 3.20 A
漏源极电阻 0.2 Ω
极性 N-Channel
耗散功率 1.7 W
产品系列 IRLMS1503
输入电容 210pF @25V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 3.20 A
上升时间 4.40 ns
输入电容Ciss 210pF @25VVds
额定功率Max 1.7 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 6
封装 TSOP-6
长度 3 mm
高度 1.15 mm
封装 TSOP-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free