IRFL014NPBF

N沟道 55V 1.9A

**N-Channel Power MOSFET up to 7A, Infineon**

Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

得捷:
MOSFET N-CH 55V 1.9A SOT223

立创商城:
N沟道 55V 1.9A

艾睿:
Trans MOSFET N-CH Si 55V 2.7A 4-Pin3+Tab SOT-223 Tube

Verical:
Trans MOSFET N-CH 55V 2.7A 4-Pin3+Tab SOT-223 Tube

DeviceMart:
HEXFET Power MOSFET, N채널, Vd = 55V, Rds = 0.16Ω, Id = 1.9A, SOT-223패키지,