Trans MOSFET P-CH 30V 9.2A 8Pin SOIC N Tube
**P-Channel Power MOSFET over 8A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N Tube
Allied Electronics:
IRF9333PBF P-channel MOSFET Transistor, 9.2 A, 30 V, 8-Pin SOIC
Verical:
Trans MOSFET P-CH 30V 9.2A 8-Pin SOIC N Tube
漏源极电阻 32.5 mΩ
极性 P-Channel
耗散功率 2.5 W
产品系列 IRF9333
漏源极电压Vds 30 V
连续漏极电流Ids -9.20 A
输入电容Ciss 1110pF @25VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17