N沟道,100V,10A,185mΩ@10V
**N-Channel Power MOSFET 8A to 12A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 100V 10A 3-Pin3+Tab IPAK Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 100V; RDSON 0.185Ohm; ID 10A; I-Pak TO-251AA; PD 48W
Verical:
Trans MOSFET N-CH 100V 10A 3-Pin3+Tab IPAK Tube
Newark:
The IRLU120NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
DeviceMart:
MOSFET N-CH 100V 10A I-PAK
额定电压DC 100 V
额定电流 10.0 A
通道数 1
漏源极电阻 0.265 Ω
极性 N-Channel
耗散功率 48 W
产品系列 IRLU120N
输入电容 440pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 10.0 A
上升时间 35.0 ns
输入电容Ciss 440pF @25VVds
额定功率Max 48 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRLU120NPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
HUF76609D3 飞兆/仙童 | 功能相似 | IRLU120NPBF和HUF76609D3的区别 |