IRF8707GPBF

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IRF8707GPBF概述

Trans MOSFET N-CH 30V 11A 8Pin SOIC

Description

The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operationincluding Rdson and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.

Benefits

Very Low Gate Charge

Very Low RDSonat 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage and Current

20V VGS Max. Gate Rating

100% tested for Rg

Lead-Free

Halogen-Free

IRF8707GPBF中文资料参数规格
技术参数

极性 N-Channel

耗散功率 2.5 W

产品系列 IRF8707G

漏源极电压Vds 30 V

连续漏极电流Ids 11.0 mA

输入电容Ciss 760pF @15VVds

额定功率Max 2.5 W

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRF8707GPBF
型号: IRF8707GPBF
制造商: International Rectifier 国际整流器
描述:Trans MOSFET N-CH 30V 11A 8Pin SOIC
替代型号IRF8707GPBF
型号/品牌 代替类型 替代型号对比

IRF8707GPBF

International Rectifier 国际整流器

当前型号

当前型号

STS11N3LLH5

意法半导体

功能相似

IRF8707GPBF和STS11N3LLH5的区别

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