N沟道 20V 5.7A
**HEXFET® N-Channel Power MOSFET up to 50A, Infineon**
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
得捷:
MOSFET N-CH 20V 5.7A MICRO8
立创商城:
N沟道 20V 5.7A
艾睿:
Trans MOSFET N-CH 20V 5.7A 8-Pin Micro Tube
Allied Electronics:
IRF7601PBF N-channel MOSFET Transistor, 5.7 A, 20 V, 8-Pin Micro
Verical:
Trans MOSFET N-CH 20V 5.7A 8-Pin Micro Tube
漏源极电阻 0.05 Ω
极性 N-Channel
耗散功率 1.8 W
产品系列 IRF7601
输入电容 650pF @15V
漏源极电压Vds 20 V
连续漏极电流Ids 5.70 A
输入电容Ciss 650pF @15VVds
额定功率Max 1.8 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 Micro-8
长度 3.05 mm
高度 0.91 mm
封装 Micro-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC