INTERNATIONAL RECTIFIER IRFU9024NPBF 场效应管, P通道, MOSFET, -55V, 11A, IPAKS 新
**P-Channel Power MOSFET over 8A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
IRFU9024N - 55V SINGLE P-CHANNEL
e络盟:
场效应管, P通道, MOSFET, -55V, 11A, IPAKS
艾睿:
Trans MOSFET P-CH 55V 11A 3-Pin3+Tab IPAK Tube
Verical:
Trans MOSFET P-CH 55V 11A 3-Pin3+Tab IPAK Tube
力源芯城:
-55V,-11A,P沟道功率MOSFET
DeviceMart:
MOSFET P-CH 55V 11A I-PAK
额定电压DC -60.0 V
额定电流 -1.60 A
通道数 1
漏源极电阻 0.175 Ω
极性 P-Channel
耗散功率 38 W
产品系列 IRFU9024N
漏源极电压Vds 55 V
漏源击穿电压 -55.0 V
连续漏极电流Ids -11.0 A
上升时间 55.0 ns
输入电容Ciss 350pF @25VVds
额定功率Max 38 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC