N沟道,200V,5A,600mΩ@10V
Applications
• High frequency DC-DC converters
• Lead-Free
Benefits
• Low Gate to Drain Charge to Reduce Switching Losses
• Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
• Fully Characterized Avalanche Voltage and Current
艾睿:
Trans MOSFET N-CH 200V 5A 3-Pin3+Tab IPAK Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 200V; RDSON 600 Milliohms; ID 5A; I-Pak TO-251AA; PD 43W
Verical:
Trans MOSFET N-CH 200V 5A 3-Pin3+Tab IPAK Tube
DeviceMart:
MOSFET N-CH 200V 5A I-PAK
额定电压DC 200 V
额定电流 5.00 A
漏源极电阻 600 mΩ
极性 N-Channel
耗散功率 43 W
产品系列 IRFU220N
阈值电压 4 V
输入电容 300pF @25V
漏源极电压Vds 200 V
漏源击穿电压 200 V
连续漏极电流Ids 5.00 A
上升时间 11.0 ns
热阻 3.5℃/W RθJC
输入电容Ciss 300pF @25VVds
额定功率Max 43 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17