IPD350N06LGBTMA1

INFINEON  IPD350N06LGBTMA1  晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V 新

OptiMOS™ 功率 MOSFET 系列

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色封装（无铅）

超低 Rdson

得捷:
MOSFET N-CH 60V 29A TO252-3

欧时:
Infineon OptiMOS 系列 Si N沟道 MOSFET IPD350N06LGBTMA1, 29 A, Vds=60 V, 3引脚 DPAK TO-252封装

立创商城:
N沟道 60V 29A

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 29 A, 0.027 ohm, TO-252 DPAK, 表面安装

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPD350N06LGBTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 68000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.

TME:
Transistor: N-MOSFET; unipolar; 60V; 50A; 71W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 29A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD350N06LGBTMA1  MOSFET, N-CH, 60V, 29A, TO-252-3 New

Win Source:
MOSFET N-CH 60V 29A DPAK