MOSFET, Power; Dual N-Ch; VDSS 20V; RDSON 0.1Ω; ID 3.5A; SO-8; PD 2W; VGS +/-12V
**HEXFET® N-Channel Power MOSFET up to 50A, Infineon**
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
艾睿:
Trans MOSFET N-CH 20V 3.5A 8-Pin SOIC T/R
Allied Electronics:
MOSFET, Power; Dual N-Ch; VDSS 20V; RDSON 0.1Ohm; ID 3.5A; SO-8; PD 2W; VGS +/-12V
DeviceMart:
MOSFET N-CH 20V 3.5A 8-SOIC
额定电压DC 20.0 V
额定电流 3.50 A
漏源极电阻 0.15 Ω
极性 N-Channel
耗散功率 2 W
产品系列 IRF7101
阈值电压 3 V
输入电容 320pF @15V
漏源极电压Vds 20 V
漏源击穿电压 20 V
连续漏极电流Ids 3.50 A
上升时间 10.0 ns
输入电容Ciss 320pF @15VVds
额定功率Max 2 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free