N沟道 150V 2.6A
**HEXFET® N-Channel Power MOSFET up to 50A, Infineon**
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
得捷:
HEXFET POWER MOSFET
立创商城:
N沟道 150V 2.6A
艾睿:
Trans MOSFET N-CH 150V 2.6A 4-Pin3+Tab SOT-223 Tube
Verical:
Trans MOSFET N-CH 150V 2.6A 4-Pin3+Tab SOT-223 Tube
Newark:
The IRFL4315PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
DeviceMart:
MOSFET N-CH 150V 2.6A SOT223
额定电压DC 150 V
额定电流 2.60 A
漏源极电阻 185 mΩ
极性 N-Channel
耗散功率 2.8 W
产品系列 IRFL4315
输入电容 420pF @25V
漏源极电压Vds 150 V
漏源击穿电压 150 V
连续漏极电流Ids 2.60 A
上升时间 21.0 ns
输入电容Ciss 420pF @25VVds
额定功率Max 2.8 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-261-4
长度 6.7 mm
高度 1.45 mm
封装 TO-261-4
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC