晶体管, MOSFET, N沟道, 16 A, 100 V, 0.053 ohm, 10 V, 2.8 V
* Dual N-channel Normal Level - Enhancement mode * AEC Q101 qualified * MSL1 up to 260°C peak reflow * 175°C operating temperature * Green Product RoHS compliant * 100% Avalanche tested
得捷:
MOSFET 2N-CH 100V 16A 8TDSON
欧时:
Infineon IPG16N10S461ATMA1
立创商城:
IPG16N10S461ATMA1
e络盟:
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.053 ohm, 10 V, 2.8 V
艾睿:
Create an effective common drain amplifier using this IPG16N10S461ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 29000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 100V 16A 8-Pin TDSON T/R
Verical:
Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
针脚数 3
漏源极电阻 0.053 Ω
极性 N-CH
耗散功率 29 W
阈值电压 2.8 V
漏源极电压Vds 100 V
连续漏极电流Ids 16A
上升时间 1 ns
输入电容Ciss 490pF @25VVds
额定功率Max 29 W
下降时间 5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 29000 mW
安装方式 Surface Mount
引脚数 8
封装 PG-TDSON-8-4
封装 PG-TDSON-8-4
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Direct Fuel Injection, Solenoid control, LED and Body lighting
RoHS标准
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IPG16N10S461ATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
CPS22-NO00A10-SNCSNCWF-RI0YLVAR-W1036-S Schurter | 功能相似 | IPG16N10S461ATMA1和CPS22-NO00A10-SNCSNCWF-RI0YLVAR-W1036-S的区别 |