2个N沟道 20V 6.6A
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Generation V Technology
• Ultra Low On-Resistance
• Dual N-Channel MOSFET
• Surface Mount
• Fully Avalanche Rated
• Lead-Free
额定电压DC 20.0 V
额定电流 6.60 A
极性 N-Channel, Dual N-Channel
耗散功率 2 W
产品系列 IRF7311
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
连续漏极电流Ids 6.60 A
上升时间 17.0 ns
输入电容Ciss 900pF @15VVds
额定功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF7311PBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STS5DNF20V 意法半导体 | 功能相似 | IRF7311PBF和STS5DNF20V的区别 |