IPU60R1K4C6BKMA1

IPU60R1K4C6BKMA1图片1
IPU60R1K4C6BKMA1图片2
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IPU60R1K4C6BKMA1概述

TO-251 N-CH 650V 3.2A

Description:

CoolMOS™ C6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. 

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**600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3**
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**650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3**

Summary of Features:

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Easy control of switching behavior
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Extremely low losses due to very low Figure of Merit R DSon* Q g and E oss
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Very high commutation ruggedness
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Easy to use
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Better light load efficiency compared to C3
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Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
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Better price performance in comparison to previous CoolMOS™ generations
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More efficient, more compact, lighter and cooler

Benefits:

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Improved power density
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Improved reliability
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General purpose part can be used in both soft and hard switching topologies
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Better light load effciency
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Improved effciency in hard switching applications
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Improved ease-of-use
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Reduces possible ringing due to pcb layout and package parasitic effects

Target Applications:

 

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Consumer
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Adapter
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eMobility
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PFC stages for server & telecom
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SMPS
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PC power
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Solar
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Lighting
IPU60R1K4C6BKMA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 28.4W Tc

阈值电压 3 V

漏源极电压Vds 600 V

连续漏极电流Ids 3.2A

上升时间 7 ns

输入电容Ciss 200pF @100VVds

下降时间 20 ns

耗散功率Max 28.4W Tc

封装参数

安装方式 Through Hole

封装 TO-251-3

外形尺寸

封装 TO-251-3

物理参数

工作温度 -55℃ ~ 155℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IPU60R1K4C6BKMA1
型号: IPU60R1K4C6BKMA1
描述:TO-251 N-CH 650V 3.2A
替代型号IPU60R1K4C6BKMA1
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