晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V
Summary of Features:
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- N-channel - Enhancement mode
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- AEC qualified
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- MSL1 up to 260°C peak reflow
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- 175°C operating temperature
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- Green Product RoHS compliant
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- 100% Avalanche tested
Benefits:
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- world"s lowest RDS at 60V on
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- highest current capability
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- lowest switching and conduction power losses for highest thermal efficiency
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- robust packages with superior quality and reliability
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- Optimized total gate charge enables smaller driver output stages
针脚数 3
漏源极电阻 0.0071 Ω
极性 N-CH
耗散功率 71 W
阈值电压 3 V
漏源极电压Vds 60 V
连续漏极电流Ids 50A
上升时间 40 ns
输入电容Ciss 2911pF @25VVds
下降时间 5 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 71000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Lighting, Solenoids control, Single-ended motors, Valves control
RoHS标准
含铅标准 无铅
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPD50N06S409ATMA2 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPD50N06S4L12ATMA2 英飞凌 | 类似代替 | IPD50N06S409ATMA2和IPD50N06S4L12ATMA2的区别 |
IPD50N06S409ATMA1 英飞凌 | 类似代替 | IPD50N06S409ATMA2和IPD50N06S409ATMA1的区别 |