1个N沟道和1个P沟道 30V 3A 4A
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
额定电流 4.00 A
漏源极电阻 50 mΩ
极性 N-Channel, P-Channel
耗散功率 1.4 W
产品系列 IRF7309
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
连续漏极电流Ids 4.70 A
热阻 62.5 K/W
输入电容Ciss 520pF @15VVds
额定功率Max 1.4 W
工作温度Max 150 ℃
工作温度Min -55 ℃
工作结温Max 150 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF7309PBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STS8C5H30L 意法半导体 | 功能相似 | IRF7309PBF和STS8C5H30L的区别 |