INTERNATIONAL RECTIFIER IRF9Z34NPBF 场效应管, P通道, MOSFET, -55V, 19A, TO-220AB 新
**P-Channel Power MOSFET over 8A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
e络盟:
场效应管, P通道, MOSFET, -55V, 19A, TO-220AB
艾睿:
Trans MOSFET P-CH 55V 19A 3-Pin3+Tab TO-220AB Tube
Verical:
Trans MOSFET P-CH 55V 19A 3-Pin3+Tab TO-220AB Tube
力源芯城:
-17A,-55V,P沟道功率MOSFET
额定电压DC -55.0 V
额定电流 -19.0 A
漏源极电阻 0.1 Ω
极性 P-Channel
耗散功率 68 W
产品系列 IRF9Z34N
漏源极电压Vds 55 V
漏源击穿电压 -55.0 V
连续漏极电流Ids -19.0 A
上升时间 55.0 ns
输入电容Ciss 620pF @25VVds
额定功率Max 68 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.54 mm
封装 TO-220-3
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF9Z34NPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
IRF9Z24PBF 威世 | 功能相似 | IRF9Z34NPBF和IRF9Z24PBF的区别 |
IRF9Z34PBF 威世 | 功能相似 | IRF9Z34NPBF和IRF9Z34PBF的区别 |