P沟道,-100V,-6.6A,480mΩ@-10V
**P-Channel Power MOSFETs up to 7A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET P-CH 100V 6.6A 3-Pin3+Tab IPAK Tube
Allied Electronics:
MOSFET, P-CHANNEL, -100V, -6.5A, 480 MOHM, 18 NC QG, I-PAK
立创商城:
P沟道,-100V,-6.6A,480mΩ@-10V
Verical:
Trans MOSFET P-CH 100V 6.6A 3-Pin3+Tab IPAK Tube
DeviceMart:
MOSFET P-CH 100V 6.6A I-PAK
额定电压DC -100 V
额定电流 -6.60 A
漏源极电阻 0.48 Ω
极性 P-Channel
耗散功率 40 W
产品系列 IRFU9120N
漏源极电压Vds 100 V
漏源击穿电压 -100 V
连续漏极电流Ids -6.60 A
上升时间 47.0 ns
输入电容Ciss 350pF @25VVds
额定功率Max 40 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFU9120NPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
IRFU9120PBF 威世 | 功能相似 | IRFU9120NPBF和IRFU9120PBF的区别 |