IPP055N03LGXKSA1

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IPP055N03LGXKSA1概述

N沟道 30V 50A

Description:

With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.

Available in halfbridge configuration power stage 5x6

Summary of Features:

.
Ultra low gate and output charge
.
Lowest on-state resistance in small footprint packages
.
Easy to design in

Benefits:

.
Increased battery lifetime
.
Improved EMI behavior making external snubber networks obsolete
.
Saving costs
.
Saving space
.
Reducing power losses
IPP055N03LGXKSA1中文资料参数规格
技术参数

额定功率 68 W

漏源极电阻 0.0046 Ω

极性 N-Channel

耗散功率 68 W

阈值电压 1 V

漏源极电压Vds 30 V

连续漏极电流Ids 50A

上升时间 5.2 ns

输入电容Ciss 3200pF @15VVds

下降时间 4 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 68W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tube

制造应用 VRD/VRM, Mainboard, Onboard charger

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买IPP055N03LGXKSA1
型号: IPP055N03LGXKSA1
描述:N沟道 30V 50A
替代型号IPP055N03LGXKSA1
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