MOSFET, Power; N-Ch; VDSS 100V; RDSON 90Milliohms; ID 17A; D2Pak; PD 70W; VGS +/-20V
**HEXFET® N-Channel Power MOSFET up to 50A, Infineon**
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
艾睿:
Trans MOSFET N-CH Si 100V 17A 3-Pin2+Tab D2PAK T/R
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 100V; RDSON 90Milliohms; ID 17A; D2Pak; PD 70W; VGS +/-20V
Verical:
Trans MOSFET N-CH 100V 17A 3-Pin2+Tab D2PAK T/R
DeviceMart:
MOSFET N-CH 100V 17A D2PAK
额定电压DC 100 V
额定电流 17.0 A
漏源极电阻 90 mΩ
极性 N-Channel
耗散功率 70 W
产品系列 IRF530NS
输入电容 920pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 17.0 A
上升时间 22.0 ns
输入电容Ciss 920pF @25VVds
额定功率Max 3.8 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC