The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, optimized for UPS/inverter applications, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
**N-Channel Power MOSFET 60A to 79A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 30V 62A 3-Pin3+Tab TO-220AB Tube
Verical:
Trans MOSFET N-CH 30V 62A 3-Pin3+Tab TO-220AB Tube
通道数 1
漏源极电阻 16 mΩ
极性 N-Channel
耗散功率 65 W
产品系列 IRLB8721
阈值电压 1.8 V
输入电容 1077pF @15V
漏源极电压Vds 30 V
连续漏极电流Ids 62.0 A
输入电容Ciss 1077pF @15VVds
额定功率Max 65 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
高度 16.51 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC