N沟道 650V 3.2A
Description:
CoolMOS™ C6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Summary of Features:
Benefits:
Target Applications:
额定功率 28.4 W
通道数 1
漏源极电阻 1.26 Ω
极性 N-CH
耗散功率 28 W
阈值电压 2.5 V
漏源极电压Vds 650 V
漏源击穿电压 650 V
连续漏极电流Ids 3.2A
上升时间 5.9 ns
输入电容Ciss 225pF @100VVds
下降时间 18.2 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 28W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准
含铅标准 无铅