IPD65R1K4C6ATMA1

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IPD65R1K4C6ATMA1概述

N沟道 650V 3.2A

Description:

CoolMOS™ C6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. 

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**600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3**
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**650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3**

Summary of Features:

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Easy control of switching behavior
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Extremely low losses due to very low Figure of Merit R DSon* Q g and E oss
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Very high commutation ruggedness
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Easy to use
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Better light load efficiency compared to C3
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Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
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Better price performance in comparison to previous CoolMOS™ generations
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More efficient, more compact, lighter and cooler

Benefits:

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Improved power density
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Improved reliability
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General purpose part can be used in both soft and hard switching topologies
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Better light load effciency
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Improved effciency in hard switching applications
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Improved ease-of-use
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Reduces possible ringing due to pcb layout and package parasitic effects

Target Applications:

 

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Consumer
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Adapter
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eMobility
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PFC stages for server & telecom
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SMPS
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PC power
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Solar
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Lighting
IPD65R1K4C6ATMA1中文资料参数规格
技术参数

额定功率 28.4 W

通道数 1

漏源极电阻 1.26 Ω

极性 N-CH

耗散功率 28 W

阈值电压 2.5 V

漏源极电压Vds 650 V

漏源击穿电压 650 V

连续漏极电流Ids 3.2A

上升时间 5.9 ns

输入电容Ciss 225pF @100VVds

下降时间 18.2 ns

工作温度Max 150 ℃

工作温度Min 55 ℃

耗散功率Max 28W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

长度 6.5 mm

宽度 6.22 mm

高度 2.3 mm

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买IPD65R1K4C6ATMA1
型号: IPD65R1K4C6ATMA1
描述:N沟道 650V 3.2A

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