IPP041N04NGXKSA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP041N04NGXKSA1, 80 A, Vds=40 V, 3引脚 TO-220封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 40V 80A TO220-3

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP041N04NGXKSA1, 80 A, Vds=40 V, 3引脚 TO-220封装

贸泽:
MOSFET MV POWER MOS

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; IPP041N04NGXKSA1 power MOSFET. Its maximum power dissipation is 94000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3

Verical:
Trans MOSFET N-CH 40V 80A 3-Pin3+Tab TO-220 Tube