晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V
The IPB065N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life.
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- Easy to design in
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- Increased battery lifetime
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- Improved EMI behaviour making external snubber networks obsolete
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- Saving space
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- Reducing power losses
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- Optimized technology for DC-to-DC converters
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- Qualified according to JEDEC for target applications
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- Logic level
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- Excellent gate charge x RDS ON product FOM
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- Very low ON-resistance RDS ON
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- Avalanche rated
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- Halogen-free, Green device
额定功率 56 W
通道数 1
针脚数 3
漏源极电阻 0.0054 Ω
极性 N-Channel
耗散功率 56 W
阈值电压 1 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 50A
上升时间 4.2 ns
输入电容Ciss 1800pF @15VVds
下降时间 3.4 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 56000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Power Management, Mainboard, 便携式器材, Onboard charger, 电机驱动与控制, 发光二极管照明, Consumer Electronics, VRD/VRM, Portable Devices, 计算机和计算机周边, Computers & Computer Peripherals, 电源管理, Motor Drive & Control, 消费电子产品, LED Lighting
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPB065N03LGATMA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPB065N03LG 英飞凌 | 功能相似 | IPB065N03LGATMA1和IPB065N03LG的区别 |
IPB10N03LB 英飞凌 | 功能相似 | IPB065N03LGATMA1和IPB10N03LB的区别 |