MOSFET, Power; N-Ch; VDSS 100V; RDSON 0.115Ω; ID 16A; D-Pak TO-252AA; PD 79W
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version IRFU series is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
**Features:**
* Ultra Low On-Resistance
* Surface Mount IRFR3910
* Straight Lead IRFU3910
* Advanced Process Technology
* Fast Switching
* Fully Avalanche Rated
额定电压DC 100 V
额定电流 16.0 A
通道数 1
漏源极电阻 0.115 Ω
极性 N-Channel
耗散功率 79 W
产品系列 IRFR3910
阈值电压 4 V
输入电容 640pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 16.0 A
上升时间 27.0 ns
输入电容Ciss 640pF @25VVds
额定功率Max 79 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFR3910TRLPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STD10NF10T4 意法半导体 | 功能相似 | IRFR3910TRLPBF和STD10NF10T4的区别 |
STD15NF10T4 意法半导体 | 功能相似 | IRFR3910TRLPBF和STD15NF10T4的区别 |