MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.06Ω; ID 15A; SO-8; PD 2.5W; VGS +/-12V; gFS 4
**N-Channel Power MOSFET 13A to 19A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 30V 15A 8-Pin SOIC Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.06Ohm; ID 15A; SO-8; PD 2.5W; VGS +/-12V; gFS 4
Verical:
Trans MOSFET N-CH 30V 15A 8-Pin SOIC Tube
Newark:
The IRF7455PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
额定电压DC 30.0 V
额定电流 15.0 A
漏源极电阻 0.02 Ω
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7455
输入电容 3480pF @25V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 15.0 A
上升时间 18.0 ns
输入电容Ciss 3480pF @25VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRF7455PBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STS11N3LLH5 意法半导体 | 功能相似 | IRF7455PBF和STS11N3LLH5的区别 |