IPD60R1K4C6BTMA1

INFINEON  IPD60R1K4C6BTMA1  功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V

The IPD60R1K4C6 is a 600V CoolMOS™ C6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

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Extremely low losses due to very low figure of merit RDS ON x Qg and EOSS

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Very high commutation ruggedness

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Easy to use

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Better light load efficiency

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Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

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Better performance in comparison to previous CoolMOS™ generations

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More efficient, more compact, lighter and cooler

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Improved power density

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Improved reliability

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General purpose part can be used in both soft and hard switching topologies

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.