IPD85P04P4L06ATMA1概述
晶体管, MOSFET, P沟道, -85 A, -40 V, 0.0053 ohm, -10 V, -1.7 V
Summary of Features:
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- P-channel - Logic Level - Enhancement mode
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- AEC qualified
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- MSL1 up to 260°C peak reflow
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- 175°C operating temperature
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- Green package RoHS compliant
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- 100% Avalanche tested
Benefits:
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- No charge pump required for high side drive.
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- Simple interface drive circuit
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- World"s lowest RDSon at 40V
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- Highest current capability
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- Lowest switching and conduction power losses for highest thermal efficiency
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- Robust packages with superior quality and reliability
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- Standard packages TO-252, TO-263, TO-220, TO-262
IPD85P04P4L06ATMA1中文资料参数规格
技术参数
通道数 1
针脚数 3
漏源极电阻 0.0053 Ω
极性 P-CH
耗散功率 88 W
漏源极电压Vds 40 V
连续漏极电流Ids 85A
上升时间 10 ns
输入电容Ciss 6580pF @25VVds
下降时间 39 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 88W Tc
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
外形尺寸
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
物理参数
工作温度 -55℃ ~ 175℃
其他
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 High-Side MOSFETs for motor bridges half-bridges, H-bridges, 3-phase-motors, Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
符合标准
RoHS标准
含铅标准 无铅
在线购买IPD85P04P4L06ATMA1
型号： IPD85P04P4L06ATMA1
制造商：
Infineon
英飞凌
描述：晶体管, MOSFET, P沟道, -85 A, -40 V, 0.0053 ohm, -10 V, -1.7 V