MOSFET, Power; P-Ch; VDSS -150V; RDSON 0.295Ω; ID -13A; D-Pak TO-252AA; PD 110W
**P-Channel Power MOSFET over 8A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
PFET, 13A ID, 150V, 0.295OHM,
艾睿:
Trans MOSFET P-CH 150V 13A 3-Pin2+Tab DPAK Tube
Allied Electronics:
MOSFET, Power; P-Ch; VDSS -150V; RDSON 0.295Ohm; ID -13A; D-Pak TO-252AA; PD 110W
Verical:
Trans MOSFET P-CH 150V 13A 3-Pin2+Tab DPAK Tube
DeviceMart:
MOSFET P-CH 150V 13A DPAK
额定电压DC -150 V
额定电流 -13.0 A
漏源极电阻 0.58 Ω
极性 P-Channel
耗散功率 110 W
产品系列 IRFR6215
漏源极电压Vds 150 V
漏源击穿电压 -150 V
连续漏极电流Ids -13.0 A
上升时间 36.0 ns
输入电容Ciss 860pF @25VVds
额定功率Max 110 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC