MOSFET, Power; N-Ch; VDSS 100V; RDSON 18Milliohms; ID 7.3A; SO-8; PD 2.5W; VGS +/-20
**HEXFET® N-Channel Power MOSFET up to 50A, Infineon**
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
得捷:
HEXFET POWER MOSFET
艾睿:
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 100V; RDSON 18Milliohms; ID 7.3A; SO-8; PD 2.5W; VGS +/-20
Verical:
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube
DeviceMart:
MOSFET N-CH 100V 7.3A 8-SOIC
额定电压DC 100 V
额定电流 7.30 A
漏源极电阻 22 mΩ
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7495
阈值电压 4 V
输入电容 1530pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 7.30 A
上升时间 13 ns
输入电容Ciss 1530pF @25VVds
额定功率Max 2.5 W
下降时间 36 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17