IRFU5305PBF

MOSFET, Power; P-Ch; VDSS -55V; RDSON 0.065Ω; ID -31A; I-Pak TO-251AA; PD 110W

**P-Channel Power MOSFET over 8A, Infineon**

Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

得捷:
IRFU5305 - 20V-250V P-CHANNEL PO

艾睿:
Trans MOSFET P-CH 55V 31A 3-Pin3+Tab IPAK Tube

Verical:
Trans MOSFET P-CH 55V 31A 3-Pin3+Tab IPAK Tube

Newark:
The IRFU5305PBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.

DeviceMart:
MOSFET P-CH 55V 31A I-PAK