Single N-Channel 55V 48W 18NC Hexfet Power Mosfet Through Hole - I-Pak
**N-Channel Power MOSFET 30A to 39A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 55V 30A 3-Pin3+Tab IPAK Tube
Allied Electronics:
MOSFET, N Ch., Automotive, 55V, 30A, 24.5 MOHM, 18 NC QG, I-PAK, Pb-Free
Verical:
Trans MOSFET N-CH 55V 30A 3-Pin3+Tab IPAK Tube
DeviceMart:
MOSFET N-CH 55V 30A I-PAK
额定电压DC 55.0 V
额定电流 30.0 A
漏源极电阻 24.5 mΩ
极性 N-Channel
耗散功率 48 W
产品系列 IRFU4105Z
阈值电压 4 V
输入电容 740pF @25V
漏源极电压Vds 55 V
漏源击穿电压 55.0 V
连续漏极电流Ids 30.0 A
上升时间 40 ns
输入电容Ciss 740pF @25VVds
额定功率Max 48 W
下降时间 24 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 48000 mW
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
脚长度 9.65 mm
封装 TO-251-3
材质 Silicon
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17