MOSFET, Power; N-Ch; VDSS 30V; RDSON 0.045Ω; ID 23A; I-Pak TO-251AA; PD 45W
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount IRLR2703
Straight Lead IRLU2703
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
额定电压DC 30.0 V
额定电流 23.0 A
漏源极电阻 0.065 Ω
极性 N-Channel
耗散功率 45 W
产品系列 IRLU2703
输入电容 450pF @25V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 23.0 A
上升时间 140 ns
输入电容Ciss 450pF @25VVds
额定功率Max 45 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
高度 6.22 mm
封装 TO-251-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC