Trans MOSFET N-CH 30V 13.3A 8Pin SOIC Tube
Description
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications
• 100% Tested for Rg
• Lead-Free
额定电压DC 30.0 V
额定电流 17.0 A
通道数 1
漏源极电阻 8.5 mΩ
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7809AV
阈值电压 1 V
漏源极电压Vds 30 V
连续漏极电流Ids 13.3 A
上升时间 36.0 ns
输入电容Ciss 3780pF @16VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17