IKD06N60RATMA1

IKD06N60RATMA1图片1
IKD06N60RATMA1图片2
IKD06N60RATMA1概述

Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin2+Tab DPAK T/R

Summary of Features:

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Optimized parameters for up to 20% lower switching losses
.
Operating range of DC to 30kHz
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Max junction temperature 175°C
.
Short circuit capability of 5µs
.
Very tight parameter distribution
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Best in class current versus package size performance
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Smooth switching performance leading to low EMI levels

Benefits:

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Excellent cost/performance for hard switching applications
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Outstanding temperature stability
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Very good EMI behavior
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Up to 60% space saving on the PCB
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Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching
IKD06N60RATMA1中文资料参数规格
技术参数

耗散功率 100000 mW

击穿电压集电极-发射极 600 V

反向恢复时间 68 ns

额定功率Max 100 W

工作温度Max 175 ℃

工作温度Min -40 ℃

耗散功率Max 100000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -40℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Fridge compressors

符合标准

RoHS标准

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IKD06N60RATMA1
型号: IKD06N60RATMA1
描述:Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin2+Tab DPAK T/R

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