INTERNATIONAL RECTIFIER IRFIZ24NPBF 场效应管, MOSFET, N沟道, 55V, 14A TO-220FP
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
额定电压DC 55.0 V
额定电流 14.0 A
针脚数 3
漏源极电阻 70 mΩ
极性 N-Channel
耗散功率 29 W
产品系列 IRFIZ24N
阈值电压 4 V
漏源极电压Vds 55 V
漏源击穿电压 55.0 V
连续漏极电流Ids 14.0 A
上升时间 34.0 ns
输入电容Ciss 370pF @25VVds
额定功率Max 29 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2018/06/27
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFIZ24NPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
IRFIZ34NPBF 英飞凌 | 功能相似 | IRFIZ24NPBF和IRFIZ34NPBF的区别 |