IPG20N10S4L22ATMA1

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IPG20N10S4L22ATMA1概述

双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V

Summary of Features:

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 Dual N-channel Logic Level - Enhancement mode
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AEC Q101 qualified
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MSL1 up to 260°C peak reflow
.
175°C operating temperature
.
Green Product RoHS compliant
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100% Avalanche tested

Benefits:

.
Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.
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Bond wire is 200um for up to 20A current
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Larger source lead frame connection for wire bonding
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Package: PG-TDSON-8-4
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Same thermal and electrical performance as a DPAK with the same die size. 
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Exposed pad provides excellent thermal transfer varies by die size
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Two N-Channel MOSFETs in one package with 2 isolated leadframes
IPG20N10S4L22ATMA1中文资料参数规格
技术参数

针脚数 8

漏源极电阻 0.02 Ω

极性 N-CH

耗散功率 60 W

阈值电压 1.6 V

漏源极电压Vds 100 V

连续漏极电流Ids 20A

上升时间 3 ns

输入电容Ciss 1755pF @25VVds

额定功率Max 60 W

下降时间 18 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 60 W

封装参数

安装方式 Surface Mount

引脚数 8

封装 PG-TDSON-8-4

外形尺寸

封装 PG-TDSON-8-4

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Solenoid control, LED and Body lighting, Direct Fuel Injection

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买IPG20N10S4L22ATMA1
型号: IPG20N10S4L22ATMA1
描述:双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V

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