N沟道 40V 18A
**N-Channel Power MOSFET 13A to 19A, Infineon**
Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
MOSFET N-CH 40V 18A 8SO
立创商城:
N沟道 40V 18A
艾睿:
Trans MOSFET N-CH 40V 18A 8-Pin SOIC Tube
Verical:
Trans MOSFET N-CH 40V 18A 8-Pin SOIC Tube
DeviceMart:
MOSFET N-CH 40V 18A 8-SOIC
额定电压DC 40.0 V
额定电流 18.0 A
漏源极电阻 5.9 mΩ
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7842
阈值电压 2.25 V
输入电容 4500pF @20V
漏源极电压Vds 40 V
漏源击穿电压 40 V
连续漏极电流Ids 18.0 A
上升时间 12.0 ns
输出电流Max 2.5 A
输入电容Ciss 4500pF @20VVds
额定功率Max 2.5 W
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Cut Tape CT
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17